N-Channel MOSFET, 558 A, 40 V, 8-Pin DFNW onsemi NVMTS0D4N04CTXG

View all MOSFETs
Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
185-9198
Mfr. Part No.:
NVMTS0D4N04CTXG
Brand:
ON Semiconductor
Find similar products by selecting one or more attributes.
Select all

Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

558 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

450 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

244 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

8.1mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

251 nC @ 10 V

Width

8mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Height

1.15mm

Non Compliant

COO (Country of Origin):
PH
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body