Dual N-Channel MOSFET, 70 A, 164 A, 30 V, 8-Pin PQFN 5 x 6 onsemi FDMS1D2N03DSD

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Packaging Options:
RS Stock No.:
185-8788
Mfr. Part No.:
FDMS1D2N03DSD
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

70 A, 164 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (Q1) V, 3 (Q2) V

Minimum Gate Threshold Voltage

0.8 (Q1) V, 1 (Q2) V

Maximum Power Dissipation

26 W, 42 W

Maximum Gate Source Voltage

+16/-12 (Q1, Q2) V

Width

6.15mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

23 (Q1) nC @ 10 V, 84 (Q2) nC @ 10 V

Length

5.1mm

Maximum Operating Temperature

+150 °C

Height

0.75mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Non Compliant

COO (Country of Origin):
PH
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Q1: Max RDS(on) = 3.25 mOhm at Vgs = 10V
Q1: Max RDS(on) = 4.0 mOhm at Vgs = 4.5V
Q2: Max RDS(on) = 0.97 mOhm at Vgs = 10V
Q2: Max RDS(on) = 1.25 mOhm at Vgs = 4.5V
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
Applications
Computing
Networking
Point of Load
End Products
VGA Cards
Telecom Power Supplies
Servers