N-Channel MOSFET, 84 A, 80 V, 8-Pin PQFN onsemi FDMS007N08LC
- RS Stock No.:
- 185-7985
- Mfr. Part No.:
- FDMS007N08LC
- Brand:
- onsemi
Stock information currently inaccessible
- RS Stock No.:
- 185-7985
- Mfr. Part No.:
- FDMS007N08LC
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 84 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PQFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 11.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 92.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.15mm | |
| Length | 5.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.3V | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 84 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PQFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 11.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 92.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 6.15mm | ||
Length 5.1mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
Forward Diode Voltage 1.3V | ||
Non Compliant
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 6.7 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 9.9 mΩ at VGS = 4.5 V, ID = 17 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
Logic Level drive Capable
Applications
This product is general usage and suitable for many different applications
End Products
AC-DC Synchronous Rectification
DC-DC primary and secondary mosfet
Motor control switch
Max rDS(on) = 6.7 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 9.9 mΩ at VGS = 4.5 V, ID = 17 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
Logic Level drive Capable
Applications
This product is general usage and suitable for many different applications
End Products
AC-DC Synchronous Rectification
DC-DC primary and secondary mosfet
Motor control switch