Toshiba N-Channel MOSFET, 30.8 A, 600 V, 4-Pin TO-247 TK31Z60X,S1F(O
- RS Stock No.:
- 185-6334
- Mfr. Part No.:
- TK31Z60X,S1F(O
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 185-6334
- Mfr. Part No.:
- TK31Z60X,S1F(O
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30.8 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 880 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Width | 5mm | |
| Length | 15.94mm | |
| Height | 20.95mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.7V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 30.8 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 880 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Width 5mm | ||
Length 15.94mm | ||
Height 20.95mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.7V | ||
- COO (Country of Origin):
- KR
Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS
High-speed switching properties with lower capacitance.
Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)
Applications
Switching Voltage Regulators
High-speed switching properties with lower capacitance.
Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)
Applications
Switching Voltage Regulators