onsemi P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BVSS84LT1G
- RS Stock No.:
- 184-4197
- Mfr. Part No.:
- BVSS84LT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 reel of 3000 units)*
£198.00
(exc. VAT)
£237.00
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 27,000 left, shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | £0.066 | £198.00 |
| 9000 - 42000 | £0.056 | £168.00 |
| 45000 - 96000 | £0.054 | £162.00 |
| 99000 + | £0.053 | £159.00 |
*price indicative
- RS Stock No.:
- 184-4197
- Mfr. Part No.:
- BVSS84LT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 130 mA | |
| Maximum Drain Source Voltage | 50 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.9V | |
| Maximum Power Dissipation | 225 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 2.2 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 3.04mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.01mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 2.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 130 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.9V | ||
Maximum Power Dissipation 225 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 2.2 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 3.04mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.01mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 2.2V | ||
- COO (Country of Origin):
- CN
Automotive Power MOSFET ideal for low power applications. -50V -130mA 10 Ohm Single P-Channel SOT-23 Logic Level. PPAP capable suitable for automotive applications.
AEC Qualified
PPAP Capable
Miniature SOT-23 Surface Mount Package Saves Board Space
Automotive MOSFET
Applications
DC-DC Converters
Load Switching
Power Management in portable and battery-powered products such as computers, printers, cellular and cordless telephones
PPAP Capable
Miniature SOT-23 Surface Mount Package Saves Board Space
Automotive MOSFET
Applications
DC-DC Converters
Load Switching
Power Management in portable and battery-powered products such as computers, printers, cellular and cordless telephones
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