ROHM US6M1 Dual N/P-Channel MOSFET, ±1 (PChannel) A, ±1.4 (NChannel) A, 20 V, 6-Pin TUMT US6M1TR
- RS Stock No.:
- 183-5564
- Mfr. Part No.:
- US6M1TR
- Brand:
- ROHM
Stock information currently inaccessible
- RS Stock No.:
- 183-5564
- Mfr. Part No.:
- US6M1TR
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | ±1 (PChannel) A, ±1.4 (NChannel) A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TUMT | |
| Series | US6M1 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 800 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 1 W | |
| Maximum Gate Source Voltage | +20 (N-Channel) V, -12 (P-Channel) V | |
| Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V | |
| Number of Elements per Chip | 2 | |
| Width | 1.7mm | |
| Length | 2mm | |
| Maximum Operating Temperature | 150 °C | |
| Height | 0.75mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N, P | ||
Maximum Continuous Drain Current ±1 (PChannel) A, ±1.4 (NChannel) A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TUMT | ||
Series US6M1 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 800 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 1 W | ||
Maximum Gate Source Voltage +20 (N-Channel) V, -12 (P-Channel) V | ||
Typical Gate Charge @ Vgs 2.1 nC @ 4.5 V | ||
Number of Elements per Chip 2 | ||
Width 1.7mm | ||
Length 2mm | ||
Maximum Operating Temperature 150 °C | ||
Height 0.75mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- JP
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Nch+Pch Middle-power MOSFET
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