ROHM QS8K21 Dual N-Channel MOSFET, 4 A, 45 V, 8-Pin TSMT QS8K21TR

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Unavailable
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RS Stock No.:
183-5461
Mfr. Part No.:
QS8K21TR
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

45 V

Package Type

TSMT

Series

QS8K21

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

150 °C

Width

2.5mm

Number of Elements per Chip

2

Length

3mm

Typical Gate Charge @ Vgs

5.4 nC @ 10 V

Height

0.8mm

Forward Diode Voltage

1.2V

COO (Country of Origin):
JP
Complex type MOSFETs (N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

4Ｖ-drive type
Nch+Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free