ROHM RQ3E150BN N-Channel MOSFET, 39 A, 30 V, 8-Pin HSMT RQ3E150BNTB

Unavailable
RS will no longer stock this product.
RS Stock No.:
183-5441
Mfr. Part No.:
RQ3E150BNTB
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

30 V

Package Type

HSMT

Series

RQ3E150BN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

17 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

3.1mm

Maximum Operating Temperature

150 °C

Typical Gate Charge @ Vgs

45 nC @ 10 V

Length

3.3mm

Height

0.85mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

COO (Country of Origin):
JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on - resistance.
High Power Package (HSMT8).
Pb-free lead plating .
Halogen Free