Diodes Inc N-Channel MOSFET, 4 A, 100 V, 6-Pin U-DFN2020 DMT10H072LFDF-7
- RS Stock No.:
- 182-7498
- Mfr. Part No.:
- DMT10H072LFDF-7
- Brand:
- DiodesZetex
Stock information currently inaccessible
- RS Stock No.:
- 182-7498
- Mfr. Part No.:
- DMT10H072LFDF-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | U-DFN2020 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 2.05mm | |
| Typical Gate Charge @ Vgs | 5.1 nC @ 10V | |
| Number of Elements per Chip | 1 | |
| Width | 2.05mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.58mm | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type U-DFN2020 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 2.05mm | ||
Typical Gate Charge @ Vgs 5.1 nC @ 10V | ||
Number of Elements per Chip 1 | ||
Width 2.05mm | ||
Maximum Operating Temperature +150 °C | ||
Height 0.58mm | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low On-Resistance
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
PCB Footprint of 4mm2
Low On-Resistance
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.