Diodes Inc Dual N-Channel MOSFET, 30.8 (State) A, 43.6 (Steady) A, 40 V, 8-Pin PowerDI5060 DMTH4014LPD-13
- RS Stock No.:
- 182-7388
- Mfr. Part No.:
- DMTH4014LPD-13
- Brand:
- DiodesZetex
Stock information currently inaccessible
- RS Stock No.:
- 182-7388
- Mfr. Part No.:
- DMTH4014LPD-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30.8 (State) A, 43.6 (Steady) A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PowerDI5060 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 25 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 42.8 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 2 | |
| Width | 4.95mm | |
| Length | 5.85mm | |
| Typical Gate Charge @ Vgs | 10.2 nC @ 10V | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 30.8 (State) A, 43.6 (Steady) A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerDI5060 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 42.8 W | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 2 | ||
Width 4.95mm | ||
Length 5.85mm | ||
Typical Gate Charge @ Vgs 10.2 nC @ 10V | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Applications
Power Management Functions
DC-DC Converters
Backlighting
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Applications
Power Management Functions
DC-DC Converters
Backlighting