Diodes Inc P-Channel MOSFET, 150 A, 20 V, 8-Pin PowerDI5060-8 DMP2003UPS-13
- RS Stock No.:
- 182-7343P
- Mfr. Part No.:
- DMP2003UPS-13
- Brand:
- DiodesZetex
Subtotal 10 units (supplied on a continuous strip)*
£6.84
(exc. VAT)
£8.21
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 6,740 unit(s) shipping from 06 October 2025
- Plus 999,993,250 unit(s) shipping from 11 May 2026
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Units | Per unit |
|---|---|
| 10 + | £0.684 |
*price indicative
- RS Stock No.:
- 182-7343P
- Mfr. Part No.:
- DMP2003UPS-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | PowerDI5060-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.4V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 80 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.1mm | |
| Length | 6mm | |
| Typical Gate Charge @ Vgs | 177 nC @ 10V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type PowerDI5060-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.4V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 80 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 5.1mm | ||
Length 6mm | ||
Typical Gate Charge @ Vgs 177 nC @ 10V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
Height 1.05mm | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
<1.1mm Package Profile – Ideal for Thin Applications
Lead-free finish
Halogen and Antimony Free. “Green” Device
Application
Switch
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
<1.1mm Package Profile – Ideal for Thin Applications
Lead-free finish
Halogen and Antimony Free. “Green” Device
Application
Switch