Diodes Inc N-Channel MOSFET, 123 A, 100 V, 8-Pin PowerDI5060-8 DMTH10H010SPS-13
- RS Stock No.:
- 182-7308
- Mfr. Part No.:
- DMTH10H010SPS-13
- Brand:
- DiodesZetex
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 182-7308
- Mfr. Part No.:
- DMTH10H010SPS-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 123 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PowerDI5060-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 11.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 166 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 5.1mm | |
| Length | 6mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 56.4 nC @ 10V | |
| Maximum Operating Temperature | +175 °C | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.3V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 123 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PowerDI5060-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 11.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 166 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 5.1mm | ||
Length 6mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 56.4 nC @ 10V | ||
Maximum Operating Temperature +175 °C | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
Forward Diode Voltage 1.3V | ||
- COO (Country of Origin):
- CN
This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures more reliable and robust end application
Low RDS(ON) – Minimizes On-State Losses
Fast Switching Speed
Applications
Motor Control
DC-DC Converters
Power Management
100% Unclamped Inductive Switching – Ensures more reliable and robust end application
Low RDS(ON) – Minimizes On-State Losses
Fast Switching Speed
Applications
Motor Control
DC-DC Converters
Power Management