Diodes Inc N-Channel MOSFET, 16 (State) A, 20 (Steady) A, 30 V, 8-Pin PowerDI3333 DMN3012LDG-7
- RS Stock No.:
- 182-7296
- Mfr. Part No.:
- DMN3012LDG-7
- Brand:
- DiodesZetex
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 182-7296
- Mfr. Part No.:
- DMN3012LDG-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 (State) A, 20 (Steady) A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerDI3333 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±10 V | |
| Width | 3.4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 4.7 nC @ 4.5V | |
| Length | 3.4mm | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.18mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 (State) A, 20 (Steady) A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerDI3333 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±10 V | ||
Width 3.4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.7 nC @ 4.5V | ||
Length 3.4mm | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.18mm | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Lead-free finish
Halogen and Antimony Free. “Green” Device.
Applications
DC-DC Converters
Power Management Functions
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Lead-free finish
Halogen and Antimony Free. “Green” Device.
Applications
DC-DC Converters
Power Management Functions