Diodes Inc N-Channel MOSFET, 6.6 (State) A, 9.4 (Steady) A, 60 V, 6-Pin U-DFN2020 DMTH6016LFDFW-7
- RS Stock No.:
- 182-7210
- Mfr. Part No.:
- DMTH6016LFDFW-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 10 units)*
£6.25
(exc. VAT)
£7.50
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.625 | £6.25 |
| 100 - 490 | £0.554 | £5.54 |
| 500 - 740 | £0.453 | £4.53 |
| 750 - 1490 | £0.393 | £3.93 |
| 1500 + | £0.384 | £3.84 |
*price indicative
- RS Stock No.:
- 182-7210
- Mfr. Part No.:
- DMTH6016LFDFW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6.6 (State) A, 9.4 (Steady) A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | U-DFN2020 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 27.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 15.3 nC @ 10V | |
| Width | 2.05mm | |
| Length | 2.05mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.6mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.6 (State) A, 9.4 (Steady) A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type U-DFN2020 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 27.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 15.3 nC @ 10V | ||
Width 2.05mm | ||
Length 2.05mm | ||
Number of Elements per Chip 1 | ||
Height 0.6mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Rated to +175°C – Ideal for High Ambient Temperature
Environments
Low RDS(ON) – Ensures On State Losses Are Minimized
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Application
Power Management Functions
DC-DC Converters
Backlighting
Environments
Low RDS(ON) – Ensures On State Losses Are Minimized
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Application
Power Management Functions
DC-DC Converters
Backlighting