Diodes Inc N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK DMNH6011LK3-13
- RS Stock No.:
- 182-7152
- Mfr. Part No.:
- DMNH6011LK3-13
- Brand:
- DiodesZetex
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 182-7152
- Mfr. Part No.:
- DMNH6011LK3-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 18 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 49.1 nC @ 10V | |
| Length | 6.7mm | |
| Width | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.26mm | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 18 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 49.1 nC @ 10V | ||
Length 6.7mm | ||
Width 6.2mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.26mm | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Rated to 175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures more Reliable and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Power Supplies
Motor Control
DC-DC Converters
100% Unclamped Inductive Switching – Ensures more Reliable and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Power Supplies
Motor Control
DC-DC Converters
Related links
- STMicroelectronics STripFET F3 N-Channel MOSFET 55 V, 3-Pin DPAK STD65N55F3
- Diodes Inc N-Channel MOSFET 30 V, 3-Pin DPAK DMN3009SK3-13
- Diodes Inc P-Channel MOSFET 40 V, 3-Pin DPAK DMPH4013SK3Q-13
- STMicroelectronics N-Channel MOSFET 55 V, 3-Pin D2PAK STB80NF55-06T4
- Infineon N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S2L07AKSA2
- Infineon N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S207AKSA4
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin I2PAK IPI80N06S207AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin D2PAK IPB80N06S208ATMA1