Diodes Inc P-Channel MOSFET, 4 A, 20 V, 3-Pin SOT-23 DMG3415U-7-57
- RS Stock No.:
- 182-7104
- Mfr. Part No.:
- DMG3415U-7-57
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 100 units)*
£10.90
(exc. VAT)
£13.10
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 300 left, shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | £0.109 | £10.90 |
| 200 - 400 | £0.095 | £9.50 |
| 500 - 900 | £0.076 | £7.60 |
| 1000 - 1900 | £0.069 | £6.90 |
| 2000 + | £0.063 | £6.30 |
*price indicative
- RS Stock No.:
- 182-7104
- Mfr. Part No.:
- DMG3415U-7-57
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 71 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 900 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 9.1 nC @ 4.5 V | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 71 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 9.1 nC @ 4.5 V | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
PPAP Capable
Applications
DC-DC Converters
Power Management Functions
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
PPAP Capable
Applications
DC-DC Converters
Power Management Functions
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