Diodes Inc N-Channel MOSFET, 7.1 A, 60 V, 3-Pin SOT-223 DMN6040SE-13
- RS Stock No.:
- 182-7066
- Mfr. Part No.:
- DMN6040SE-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
£8.575
(exc. VAT)
£10.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 125 unit(s) shipping from 01 October 2025
- Plus 850 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | £0.343 | £8.58 |
| 100 - 475 | £0.274 | £6.85 |
| 500 - 975 | £0.229 | £5.73 |
| 1000 - 1975 | £0.211 | £5.28 |
| 2000 + | £0.197 | £4.93 |
*price indicative
- RS Stock No.:
- 182-7066
- Mfr. Part No.:
- DMN6040SE-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.1 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 55 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Width | 3.55mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 22.4 nC @ 10V | |
| Length | 6.55mm | |
| Height | 1.65mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 55 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 3.55mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 22.4 nC @ 10V | ||
Length 6.55mm | ||
Height 1.65mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Motor Control
Transformer Driving Switch
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
Low On-Resistance
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Motor Control
Transformer Driving Switch
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
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