Diodes Inc N-Channel MOSFET, 32.9 (State) A, 41.2 (Steady) A, 100 V, 3 + Tab-Pin DPAK DMT10H025SK3-13
- RS Stock No.:
- 182-6927
- Mfr. Part No.:
- DMT10H025SK3-13
- Brand:
- DiodesZetex
Subtotal (1 reel of 2500 units)*
£570.00
(exc. VAT)
£685.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.228 | £570.00 |
*price indicative
- RS Stock No.:
- 182-6927
- Mfr. Part No.:
- DMT10H025SK3-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 32.9 (State) A, 41.2 (Steady) A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-252 (DPAK) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 30 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 6.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 21.4 nC @ 10V | |
| Length | 6.7mm | |
| Number of Elements per Chip | 1 | |
| Height | 2.26mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 32.9 (State) A, 41.2 (Steady) A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-252 (DPAK) | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 6.2mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 21.4 nC @ 10V | ||
Length 6.7mm | ||
Number of Elements per Chip 1 | ||
Height 2.26mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low QG – Minimizes Switching Losses
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Power Management Functions
DC-DC Converters
Backlighting
Low RDS(ON) – Minimizes Power Losses
Low QG – Minimizes Switching Losses
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Power Management Functions
DC-DC Converters
Backlighting