Diodes Inc P-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-323 DMP2165UW-7
- RS Stock No.:
- 182-6915
- Mfr. Part No.:
- DMP2165UW-7
- Brand:
- DiodesZetex
Subtotal (1 reel of 3000 units)*
£183.00
(exc. VAT)
£219.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 18,000 unit(s) ready to ship
- Plus 33,000 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.061 | £183.00 |
*price indicative
- RS Stock No.:
- 182-6915
- Mfr. Part No.:
- DMP2165UW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 700 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Number of Elements per Chip | 1 | |
| Length | 2.2mm | |
| Typical Gate Charge @ Vgs | 3.5 nC @ 4.5V | |
| Width | 1.35mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 700 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Number of Elements per Chip 1 | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 3.5 nC @ 4.5V | ||
Width 1.35mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Motor Control
Power Management Functions
Backlighting
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Motor Control
Power Management Functions
Backlighting
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