Diodes Inc N-Channel MOSFET, 4.6 A, 20 V, 3-Pin SOT-23 DMN2058UW-7
- RS Stock No.:
- 182-6890
- Mfr. Part No.:
- DMN2058UW-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 reel of 3000 units)*
£159.00
(exc. VAT)
£192.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | £0.053 | £159.00 |
| 9000 - 12000 | £0.05 | £150.00 |
| 15000 + | £0.049 | £147.00 |
*price indicative
- RS Stock No.:
- 182-6890
- Mfr. Part No.:
- DMN2058UW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 91 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.13 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Length | 3mm | |
| Typical Gate Charge @ Vgs | 7.7 nC @ 10 V | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 91 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.13 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 7.7 nC @ 10 V | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Motor Control
Power Management Functions
Backlighting
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Motor Control
Power Management Functions
Backlighting
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