Diodes Inc N-Channel MOSFET, 12 (State) A, 15 (Steady) A, 12 V, 6-Pin U-DFN2020 DMN1004UFDF-7
- RS Stock No.:
- 182-6883
- Mfr. Part No.:
- DMN1004UFDF-7
- Brand:
- DiodesZetex
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 182-6883
- Mfr. Part No.:
- DMN1004UFDF-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 (State) A, 15 (Steady) A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | U-DFN2020 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Width | 2.05mm | |
| Typical Gate Charge @ Vgs | 47 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 2.05mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.58mm | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 (State) A, 15 (Steady) A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type U-DFN2020 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Width 2.05mm | ||
Typical Gate Charge @ Vgs 47 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 2.05mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.58mm | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected up to 8kV
Applications
General Purpose Interfacing Switch
Power Management Functions
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected up to 8kV
Applications
General Purpose Interfacing Switch
Power Management Functions