Toshiba P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23F SSM3J356R,LF(T
- RS Stock No.:
- 182-5538
- Mfr. Part No.:
- SSM3J356R,LF(T
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 182-5538
- Mfr. Part No.:
- SSM3J356R,LF(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23F | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 400 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20/+10 V | |
| Width | 1.8mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 8.3 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.9mm | |
| Height | 0.8mm | |
| Forward Diode Voltage | 1.2V | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23F | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 400 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20/+10 V | ||
Width 1.8mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.3 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 2.9mm | ||
Height 0.8mm | ||
Forward Diode Voltage 1.2V | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TH
4 V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V)
RDS(ON) = 300 mΩ (max) (@VGS = -10 V)
HBM: 2-kV class
Applications
Power Management Switches
Low drain-source on-resistance
RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V)
RDS(ON) = 300 mΩ (max) (@VGS = -10 V)
HBM: 2-kV class
Applications
Power Management Switches