onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 FDP8D5N10C
- RS Stock No.:
- 181-1907
- Mfr. Part No.:
- FDP8D5N10C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£4.18
(exc. VAT)
£5.02
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.09 | £4.18 |
| 20 - 198 | £1.80 | £3.60 |
| 200 + | £1.56 | £3.12 |
*price indicative
- RS Stock No.:
- 181-1907
- Mfr. Part No.:
- FDP8D5N10C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 76 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 10.36mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.67mm | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.21mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 76 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Width 4.67mm | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.21mm | ||
- COO (Country of Origin):
- CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max RDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A
Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 25nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
Solar Inverter
Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 25nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
Solar Inverter