MPN

Vishay Single Type N-Channel Power MOSFET, 11 A, 500 V TO-263 IRFS11N50APBF

RS Stock No.:: 180-8783
Mfr. Part No.:: IRFS11N50APBF
Brand:: Vishay

Vishay Single Type N-Channel Power MOSFET, 11 A, 500 V TO-263 IRFS11N50APBF

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Subtotal (1 pack of 5 units)*

£13.70

(exc. VAT)

£16.45

(inc. VAT)

FREE delivery for orders over £60.00

Last RS stock

Final 205 unit(s), ready to ship

Units	Per unit	Per Pack*
5 - 45	£2.74	£13.70
50 - 120	£2.466	£12.33
125 - 245	£2.33	£11.65
250 - 495	£2.192	£10.96
500 +	£2.056	£10.28

*price indicative

RS Stock No.:: 180-8783
Mfr. Part No.:: IRFS11N50APBF
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-263
	Maximum Drain Source Resistance Rds	0.52Ω
	Typical Gate Charge Qg @ Vgs	52nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	170W
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-263
	Maximum Drain Source Resistance Rds 0.52Ω
	Typical Gate Charge Qg @ Vgs 52nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 170W
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 520mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 170W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Effective coss specified

• Fully characterized capacitance and avalanche voltage and current

• Halogen and lead (Pb) free component

• Improved gate, avalanche and dynamic dV/dt

• Low gate charge Qg results in simple drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• High speed power switching

• Switch mode power supply (SMPS)

• Uninterruptible power supplies

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