MPN

Vishay Single 1 Type P-Channel Power MOSFET, 11 A, 60 V TO-220AB IRF9Z24PBF

RS Stock No.:: 180-8309
Mfr. Part No.:: IRF9Z24PBF
Brand:: Vishay

Vishay Single 1 Type P-Channel Power MOSFET, 11 A, 60 V TO-220AB IRF9Z24PBF

Bulk discount available

View bulk pricing options

Subtotal (1 tube of 50 units)*

£44.50

(exc. VAT)

£53.50

(inc. VAT)

FREE delivery for orders over £60.00

Temporarily out of stock

Shipping from 22 January 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£0.89	£44.50
100 - 200	£0.846	£42.30
250 +	£0.801	£40.05

*price indicative

RS Stock No.:: 180-8309
Mfr. Part No.:: IRF9Z24PBF
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220AB
	Maximum Drain Source Resistance Rds	0.28Ω
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	60W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Standards/Approvals	RoHS 2002/95/EC
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220AB
	Maximum Drain Source Resistance Rds 0.28Ω
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 60W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Standards/Approvals RoHS 2002/95/EC
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 280mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 60W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dynamic dV/dt rating

• Ease of paralleling

• Fast switching

• Lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• Repetitive avalanche rated

• Simple drive requirements

• TrenchFET power MOSFET

Applications

• Battery chargers

• Inverters

• Power supplies

• Switching mode power supply (SMPS)

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