Vishay TrenchFET Dual N/P-Channel MOSFET, 5.3 A,3.9 A, 60 V, 8-Pin SO-8 SI4559ADY-T1-E3

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Subtotal 50 units (supplied on a continuous strip)*

£73.50

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£88.00

(inc. VAT)

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50 - 120£1.47
125 - 245£1.28
250 - 495£1.056
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Packaging Options:
RS Stock No.:
180-8097P
Mfr. Part No.:
SI4559ADY-T1-E3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

5.3 A,3.9 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.072 O,0.15 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

2

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source resistance of 58mohm at a gate-source voltage of 10V. It has a drain-source voltage of 60V. It has continuous drain currents of 5.3A and 3.9A. It has a maximum power rating of 3.4W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in CCFL inverters.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested