Vishay MOSFET SQJ457EP-T1_GE3

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Subtotal 100 units (supplied on a continuous strip)*

£35.80

(exc. VAT)

£43.00

(inc. VAT)

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Units
Per unit
100 - 180£0.358
200 - 480£0.315
500 - 980£0.307
1000 +£0.299

*price indicative

Packaging Options:
RS Stock No.:
180-7972P
Mfr. Part No.:
SQJ457EP-T1_GE3
Brand:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

Applications


• Adaptor switches
• DC/DC primary switches
• Load switches
• Power management

Certifications


• AEC-Q101 qualified
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested