Vishay TrenchFET Dual N/P-Channel MOSFET, 3.9 A, 2.1 A, 20 V, 6-Pin TSOP-6 SI3585CDV-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal 200 units (supplied on a reel)*

£71.80

(exc. VAT)

£86.20

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
200 - 480£0.359
500 - 980£0.275
1000 - 1980£0.216
2000 +£0.173

*price indicative

Packaging Options:
RS Stock No.:
180-7911P
Mfr. Part No.:
SI3585CDV-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3.9 A, 2.1 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.058 O,0.195 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Number of Elements per Chip

2

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• DC/DC converters
• Drivers: motor, solenoid, relay
• Load switch for portable devices

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested