Vishay MOSFET SI7997DP-T1-GE3

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Bulk discount available

Subtotal 50 units (supplied on a continuous strip)*

£91.10

(exc. VAT)

£109.30

(inc. VAT)

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Being discontinued
  • Final 4,260 unit(s), ready to ship
Units
Per unit
50 - 120£1.822
125 - 245£1.714
250 - 495£1.602
500 +£1.498

*price indicative

Packaging Options:
RS Stock No.:
180-7902P
Mfr. Part No.:
SI7997DP-T1-GE3
Brand:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 46W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• PWM optimised
• TrenchFET power MOSFET

Applications


• Adaptor switches
• Battery management
• Load switches