Vishay MOSFET SIA817EDJ-T1-GE3
- RS Stock No.:
- 180-7827P
- Mfr. Part No.:
- SIA817EDJ-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£61.75
(exc. VAT)
£74.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 24 April 2026
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Units | Per unit |
|---|---|
| 250 - 600 | £0.247 |
| 625 - 1225 | £0.187 |
| 1250 - 2475 | £0.149 |
| 2500 + | £0.114 |
*price indicative
- RS Stock No.:
- 180-7827P
- Mfr. Part No.:
- SIA817EDJ-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
- COO (Country of Origin):
- CN
The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.
Little foot plus Schottky power MOSFET
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)