Vishay MOSFET SIA537EDJ-T1-GE3
- RS Stock No.:
- 180-7808
- Mfr. Part No.:
- SIA537EDJ-T1-GE3
- Brand:
- Vishay
Stock information currently inaccessible
- RS Stock No.:
- 180-7808
- Mfr. Part No.:
- SIA537EDJ-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
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Product Details
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- COO (Country of Origin):
- CN
The Vishay SIA537EDJ is a P&N-channel MOSFET having drain to source voltage(Vds) of -20V for P-channel and 12V for N-channel. Gate to source voltage (VGS) 8V. It is having Power PAK SC-70 package. It is offers drain to source resistance (RDS.) of 0.028ohms at 4.5VGS and 0.033ohms at 2.5VGS. for N-channel and 0.054ohms, 0.07 for P-channel resp. Maximum drain current 4.5A for N-channel and -4.5 for P-channel.
Trench FET power MOSFETs
Typical ESD protection: N-channel 2400 V, P-channel 2000 V
100 % Rg tested
Typical ESD protection: N-channel 2400 V, P-channel 2000 V
100 % Rg tested