Vishay TrenchFET P-Channel MOSFET, 7.6 A, 30 V, 3-Pin SOT-23 SI2369DS-T1-GE3

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Subtotal (1 pack of 25 units)*

£6.30

(exc. VAT)

£7.55

(inc. VAT)

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  • Final 5,825 unit(s) shipping from 09 October 2025
Units
Per unit
Per Pack*
25 - 225£0.252£6.30
250 - 600£0.247£6.18
625 - 1225£0.189£4.73
1250 - 2475£0.151£3.78
2500 +£0.126£3.15

*price indicative

Packaging Options:
RS Stock No.:
180-7798
Mfr. Part No.:
SI2369DS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.04 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source resistance of 29mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 30V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 7.6A and maximum power dissipation of 2.5W. MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• DC/DC converter
• For mobile computing
• Load switch
• Notebook adaptor switch

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested

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