Vishay TrenchFET Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SO SI4948BEY-T1-E3

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Packaging Options:
RS Stock No.:
180-7747
Mfr. Part No.:
SI4948BEY-T1-E3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SO

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.15 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Number of Elements per Chip

2

Vishay MOSFET


The Vishay surface mount dual P-channel MOSFET is a new age product with a drain-source voltage of 60V. It has drain-source resistance of 120mohm at a gate-source voltage of 10V. It has a maximum power rating of 1.4W. The MOSFET has continuous drain current of 2.4A. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

Applications


• Load switch for 1.2V, 1.5V, and 1.8V power lines
• Load switch with low voltage drop
• Small signal and high speed switching
• Ultraportable and wearable devices

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21