The Vishay SIA537EDJ is a P&N-channel MOSFET having drain to source voltage(Vds) of -20V for P-channel and 12V for N-channel. Gate to source voltage (VGS) 8V. It is having Power PAK SC-70 package. It is offers drain to source resistance (RDS.) of 0.028ohms at 4.5VGS and 0.033ohms at 2.5VGS. for N-channel and 0.054ohms, 0.07 for P-channel resp. Maximum drain current 4.5A for N-channel and -4.5 for P-channel.

Trench FET power MOSFETs
Typical ESD protection: N-channel 2400 V, P-channel 2000 V
100 % Rg tested