P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 onsemi NDS356AP
- RS Stock No.:
- 178-7630
- Mfr. Part No.:
- NDS356AP
- Brand:
- onsemi
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 178-7630
- Mfr. Part No.:
- NDS356AP
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 900 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 20V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 3.4 nC @ 5 V | |
| Length | 2.92mm | |
| Forward Diode Voltage | 1.2V | |
| Series | NDS352AP | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.94mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 900 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 20V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 3.4 nC @ 5 V | ||
Length 2.92mm | ||
Forward Diode Voltage 1.2V | ||
Series NDS352AP | ||
Minimum Operating Temperature -55 °C | ||
Height 0.94mm | ||
The ON Semiconductor NDS356AP is P channel logic level enhancement mode power field effect transistors are produced by high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed.
Exceptional on resistance and maximum DC current capability
Industry standard outline SOT-23 surface mount package
Industry standard outline SOT-23 surface mount package