Nexperia P-Channel MOSFET, 200 mA, 240 V, 3-Pin SOT-89 BSS192,115
- RS Stock No.:
- 178-7048
- Mfr. Part No.:
- BSS192,115
- Brand:
- Nexperia
Stock information currently inaccessible
- RS Stock No.:
- 178-7048
- Mfr. Part No.:
- BSS192,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 240 V | |
| Package Type | SOT-89 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.8V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 2.6mm | |
| Transistor Material | Si | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 240 V | ||
Package Type SOT-89 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.8V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 2.6mm | ||
Transistor Material Si | ||
Length 4.6mm | ||
Height 1.6mm | ||
The Nexperia a BSS192 is a P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package.
Direct interface to Complementary (C-MOS) transitory and Transistor-Transistor Logic (TTL) devices
Very fast switching
No secondary breakdown
Very fast switching
No secondary breakdown