N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK Infineon IPB026N06NATMA1

Unavailable
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RS Stock No.:
178-5074
Mfr. Part No.:
IPB026N06NATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

56 nC @ 10 V

Length

10.31mm

Number of Elements per Chip

1

Width

11.05mm

Height

4.57mm

Forward Diode Voltage

1.2V

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™5 Power MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.