onsemi N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN NTMFS6H818NT1G
- RS Stock No.:
- 178-4431
- Mfr. Part No.:
- NTMFS6H818NT1G
- Brand:
- onsemi
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- RS Stock No.:
- 178-4431
- Mfr. Part No.:
- NTMFS6H818NT1G
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 123 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | DFN | |
Mounting Type | Surface Mount | |
Pin Count | 5 | |
Maximum Drain Source Resistance | 3.7 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 3.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Width | 6.1mm | |
Length | 5.1mm | |
Typical Gate Charge @ Vgs | 46 nC @ 10 V | |
Height | 1.05mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 123 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 3.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 6.1mm | ||
Length 5.1mm | ||
Typical Gate Charge @ Vgs 46 nC @ 10 V | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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