N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN onsemi NVMFS5C426NLT1G
- RS Stock No.:
- 178-4302
- Mfr. Part No.:
- NVMFS5C426NLT1G
- Brand:
- onsemi
1380 In stock - FREE next working day delivery available
Price Each (On a Reel of 1500)
£1.43
(exc. VAT)
£1.72
(inc. VAT)
Units | Per unit | Per Reel* |
|---|---|---|
| 1500 + | £1.43 | £2,145.00 |
*price indicative
- RS Stock No.:
- 178-4302
- Mfr. Part No.:
- NVMFS5C426NLT1G
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5 x 6 mm)
Low RDS(on)
Low Qg and Capacitance
Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver losses
Enhanced Optical Inspection
Applications
Reverse Battery Protection
Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching Power Supplies
End Products
Solenoid Driver - ABS, Fuel Injection
Motor Control - EPS, Wipers, Fans, Seats, etc.
Load Switch - ECU, Chassis, body
Small Footprint (5 x 6 mm)
Low RDS(on)
Low Qg and Capacitance
Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver losses
Enhanced Optical Inspection
Applications
Reverse Battery Protection
Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching Power Supplies
End Products
Solenoid Driver - ABS, Fuel Injection
Motor Control - EPS, Wipers, Fans, Seats, etc.
Load Switch - ECU, Chassis, body
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 237 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 5 |
| Maximum Drain Source Resistance | 1.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 128 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Typical Gate Charge @ Vgs | 44 nC @ 4.5 V |
| Length | 5.1mm |
| Maximum Operating Temperature | +175 °C |
| Width | 6.1mm |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Height | 1.05mm |
| Minimum Operating Temperature | -55 °C |
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