onsemi N-Channel MOSFET, 147 A, 80 V, 8-Pin PQFN8 NTMFS08N003C
- RS Stock No.:
- 178-4257
- Mfr. Part No.:
- NTMFS08N003C
- Brand:
- onsemi
Stock information currently inaccessible
- RS Stock No.:
- 178-4257
- Mfr. Part No.:
- NTMFS08N003C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 147 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PQFN8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6mm | |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.3V | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 147 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PQFN8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Width 6mm | ||
Typical Gate Charge @ Vgs 52 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56A
Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drives
Solar Inverters
Load switches
End Products
Power adaptors
DC to DC power supplies
Power Tools
Drones
Battery packs
Shielded Gate MOSFET Technology
Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56A
Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
Applications
Primary DC−DC MOSFET
Synchronous Rectifier in DC−DC and AC−DC
Motor Drives
Solar Inverters
Load switches
End Products
Power adaptors
DC to DC power supplies
Power Tools
Drones
Battery packs