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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	650 V
	Package Type	IPAK
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	360 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	83 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±30 V
	Typical Gate Charge @ Vgs	18 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Length	6.8mm
	Width	2.5mm
	Number of Elements per Chip	1
	Height	6.3mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 650 V
	Package Type IPAK
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 360 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 83 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±30 V
	Typical Gate Charge @ Vgs 18 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Length 6.8mm
	Width 2.5mm
	Number of Elements per Chip 1
	Height 6.3mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 18 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
Optimized Capacitance
Internal Gate Resistance: 1 Ω
Typ. RDS(on) = 310 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer / Game console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter

N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK onsemi FCU360N65S3R0