Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK SQD40031EL_GE3
- RS Stock No.:
- 178-3950P
- Mfr. Part No.:
- SQD40031EL_GE3
- Brand:
- Vishay Siliconix
Bulk discount available
Subtotal 100 units (supplied on a reel)*. Quantities below 150 on continuous strip
£77.20
(exc. VAT)
£92.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,040 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 490 | £0.772 |
| 500 - 990 | £0.68 |
| 1000 + | £0.589 |
*price indicative
- RS Stock No.:
- 178-3950P
- Mfr. Part No.:
- SQD40031EL_GE3
- Brand:
- Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 136 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 186 nC @ 10 V | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Width | 2.38mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 6.22mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 186 nC @ 10 V | ||
Length 6.73mm | ||
Transistor Material Si | ||
Width 2.38mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 6.22mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||