Vishay Siliconix TrenchFET P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Discontinued
Packaging Options:
RS Stock No.:
178-3888
Mfr. Part No.:
SiSH617DN-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Height

1.07mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
CN
TrenchFET® power MOSFET