Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

40 (Channnel 1) A, 60 (Channel 2) A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAIR 6 x 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

26.6 W, 60 W

Maximum Gate Source Voltage

+16 V, +20 V, -12 V, -16 V

Transistor Material

Si

Length

5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V

Width

6mm

Number of Elements per Chip

2

Height

0.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V