Vishay Siliconix TrenchFET N-Channel MOSFET, 150 A, 40 V, 3 + Tab-Pin D2PAK SQM40022E_GE3
- RS Stock No.:
- 178-3724
- Mfr. Part No.:
- SQM40022E_GE3
- Brand:
- Vishay Siliconix
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 178-3724
- Mfr. Part No.:
- SQM40022E_GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | D2PAK (TO-263) | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 106 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
| Height | 11.3mm | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK (TO-263) | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 106 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
Height 11.3mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- TW
TrenchFET® power MOSFET
Package with low thermal resistance
Package with low thermal resistance