Vishay Siliconix TrenchFET N-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH402DN-T1-GE3

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

28 nC @ 10 V

Width

3.15mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.07mm