Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3

Stock information currently inaccessible
RS Stock No.:
178-3694
Mfr. Part No.:
SISC06DN-T1-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

1212

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

46.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Typical Gate Charge @ Vgs

38.5 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Width

3.15mm

Length

3.15mm

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

0.7V

RoHS Status: Not Applicable

COO (Country of Origin):
CN
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