Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 30 V, 8-Pin SO-8 SiRA62DP-T1-RE3

Unavailable
RS will no longer stock this product.
RS Stock No.:
178-3690
Mfr. Part No.:
SiRA62DP-T1-RE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Number of Elements per Chip

1

Width

5mm

Typical Gate Charge @ Vgs

61.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5.99mm

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

1.1V

RoHS Status: Not Applicable

COO (Country of Origin):
CN
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