Vishay Siliconix TrenchFET N-Channel MOSFET, 79 A, 100 V, 8-Pin SO-8 SIR104DP-T1-RE3
- RS Stock No.:
- 178-3684
- Mfr. Part No.:
- SIR104DP-T1-RE3
- Brand:
- Vishay Siliconix
Subtotal (1 reel of 3000 units)*
£1,980.00
(exc. VAT)
£2,370.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.66 | £1,980.00 |
*price indicative
- RS Stock No.:
- 178-3684
- Mfr. Part No.:
- SIR104DP-T1-RE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 79 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Width | 5mm | |
| Length | 5.99mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 56 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 1.07mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 79 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 5mm | ||
Length 5.99mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 56 nC @ 10 V | ||
Transistor Material Si | ||
Height 1.07mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM