Vishay Siliconix E-Series N-Channel MOSFET, 2.8 A, 800 V, 3-Pin TO-220 SIHA2N80E-GE3

Stock information currently inaccessible
RS Stock No.:
178-3673
Mfr. Part No.:
SIHA2N80E-GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

800 V

Series

E-Series

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

29 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Transistor Material

Si

Typical Gate Charge @ Vgs

9.8 nC @ 10 V

Length

10.3mm

Number of Elements per Chip

1

Width

4.7mm

Maximum Operating Temperature

+150 °C

Height

15.3mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
CN
FEATURES
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)

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